[P] Poster Session

[P-12] Double-Gate LDMOS Transistors with Exceptional Figure-of-Merit Exceeding 700 kW/mm²

Elham Mashhadi¹, *William Gerard Vandenberghe², Sara Ghazvini², Ali Saadat³, Hal Edwards⁴, Sujatha Sampath⁴, Daniel Pham⁴ (1. Department of Electrical and Computer Engineering, The University of Texas at Dallas, Richardson, TX 75080, USA, 2. Department of Material Science and Engineering, The University of Texas at Dallas, Richardson, TX 75080,USA, 3. Department of Kilby Labs, Texas Instruments Inc., Richardson, TX 75080, USA, 4. Department of Analog Technology Development, Texas Instruments Inc., Richardson, TX 75080, USA)