Presentation Information

[Session_3-04]Full-Band Semi-Classical Monte Carlo Simulation of Layer Number-Dependent Hole Transport in W- and Mo-Based Transition Metal Dichalcogenides

*Donghyeok Lee1, Sukhyeong Youn1, Yoonhoo Ha2, Jiwon Chang1 (1. Yonsei Univ., 2. Samsung Adv. Inst. of Tech., Samsung Electronics Co., Ltd.)

Comment

To browse or post comments, you must log in.Log in