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Session Details

OralSession 3: 2D

[Session 3]Session 3: Two-Dimensional Materials

Mon. Sep 28, 2026 3:20 PM - 5:10 PM JST
Mon. Sep 28, 2026 6:20 AM - 8:10 AM UTC
Room A1(3rd floor)
3:20 PM - 3:50 PM JST(6:20 AM - 6:50 AM UTC)

[Session_3-01]Interface Modeling for TCAD Simulations of 2D Semiconductor Transistors

*Akiko Ueda1 (1. AIST)
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3:50 PM - 4:10 PM JST(6:50 AM - 7:10 AM UTC)

[Session_3-02]Deterministic Full-Band Boltzmann Equation Solver for 2D Materials

*Hendrik Christoph Andre Leenders1, Josephine Faisst1, Christoph Jungemann1 (1. RWTH Aachen University)
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4:10 PM - 4:30 PM JST(7:10 AM - 7:30 AM UTC)

[Session_3-03]Engineering of n-type Metal-TMD Contacts via Ferroelectric Polarization: an Ab-initio Transport Study

Alessandro Pilotto1, Daniel Lizzit1, *Marco Pala1, David Esseni1 (1. Univ. of Udine)
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4:30 PM - 4:50 PM JST(7:30 AM - 7:50 AM UTC)

[Session_3-04]Full-Band Semi-Classical Monte Carlo Simulation of Layer Number-Dependent Hole Transport in W- and Mo-Based Transition Metal Dichalcogenides

*Donghyeok Lee1, Sukhyeong Youn1, Yoonhoo Ha2, Jiwon Chang1 (1. Yonsei Univ., 2. Samsung Adv. Inst. of Tech., Samsung Electronics Co., Ltd.)
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4:50 PM - 5:10 PM JST(7:50 AM - 8:10 AM UTC)

[Session_3-05]Strain-Dependent Electron Transport in Mono-, Bi-, and Trilayer MoS2 and WS2 Using Coupled First-Principles and Full-Band Semi-Classical Monte-Carlo Simulation

*Seongwoo Kang1, Yoonhoo Ha2, Ilgu Yoon1, Jiwon Chang1 (1. Yonsei Univ., 2. Samsung Electronics Cop. Ltd.)
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