Presentation Information
[Session_4-01]Efficient Simulation of Gate Leakage Currents in Ultra-scaled Transistors from First Principles
*Mauro Dossena1, Nicolas Vetsch1, Alexander Maeder1, Anders Winka1, Vincent Maillou1, Denghui Lu1, Alexandros Nikolaos Ziogas1, Jiang Cao1, Mathieu Luisier1 (1. Integrated System Laboratory (IIS), ETH Zürich, Switzerland)
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