Session Details

[Session 4]Session 4: Numerical Methods and Algorithms

Mon. Sep 28, 2026 3:30 PM - 5:10 PM JST
Mon. Sep 28, 2026 6:30 AM - 8:10 AM UTC
Room A2(3rd floor)

[Session_4-01]Efficient Simulation of Gate Leakage Currents in Ultra-scaled Transistors from First Principles

*Mauro Dossena1, Nicolas Vetsch1, Alexander Maeder1, Anders Winka1, Vincent Maillou1, Denghui Lu1, Alexandros Nikolaos Ziogas1, Jiang Cao1, Mathieu Luisier1 (1. Integrated System Laboratory (IIS), ETH Zürich, Switzerland)
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[Session_4-02]Efficient STEM-EBIC Simulation Using an Adjoint Drift-Diffusion Model

Chenyang Yu1, Sebastian Schneider2, Bernd Rellinghaus2, *Christoph Jungemann1 (1. RWTH Aachen Univ., 2. TUD Dresden Univ. of Tech.)
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[Session_4-03]Harmonic Balance Boltzmann Equation Solver for Gunn Domains

*Christoph Jungemann1 (1. RWTH Aachen University)
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[Session_4-04]Challenges of Drift-Diffusion Simulation for Device Characterization at 4.2 K

*Max Renner1, Yu-Chen Chang1, Tobias Linn1, Joachim Knoch1, Christoph Jungemann1 (1. RWTH Aachen Univ.)
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[Session_4-05]A TCAD-Friendly Numerical Treatment of Bandtails in Cryogenic and Amorphous Oxide Semiconductors

*Mischa Thesberg1, José María González-Medina1, Zlatan Stanojević1, Markus Kampl1, Franz Schanovsky1, Oskar Baumgartner1, Markus Karner1 (1. Global TCAD Solutions GmbH)
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