Session Details
[Session 4]Session 4: Numerical Methods and Algorithms
Mon. Sep 28, 2026 3:30 PM - 5:10 PM JST
Mon. Sep 28, 2026 6:30 AM - 8:10 AM UTC
Mon. Sep 28, 2026 6:30 AM - 8:10 AM UTC
Room A2(3rd floor)
[Session_4-01]Efficient Simulation of Gate Leakage Currents in Ultra-scaled Transistors from First Principles
*Mauro Dossena1, Nicolas Vetsch1, Alexander Maeder1, Anders Winka1, Vincent Maillou1, Denghui Lu1, Alexandros Nikolaos Ziogas1, Jiang Cao1, Mathieu Luisier1 (1. Integrated System Laboratory (IIS), ETH Zürich, Switzerland)
[Session_4-02]Efficient STEM-EBIC Simulation Using an Adjoint Drift-Diffusion Model
Chenyang Yu1, Sebastian Schneider2, Bernd Rellinghaus2, *Christoph Jungemann1 (1. RWTH Aachen Univ., 2. TUD Dresden Univ. of Tech.)
[Session_4-03]Harmonic Balance Boltzmann Equation Solver for Gunn Domains
*Christoph Jungemann1 (1. RWTH Aachen University)
[Session_4-04]Challenges of Drift-Diffusion Simulation for Device Characterization at 4.2 K
*Max Renner1, Yu-Chen Chang1, Tobias Linn1, Joachim Knoch1, Christoph Jungemann1 (1. RWTH Aachen Univ.)
[Session_4-05]A TCAD-Friendly Numerical Treatment of Bandtails in Cryogenic and Amorphous Oxide Semiconductors
*Mischa Thesberg1, José María González-Medina1, Zlatan Stanojević1, Markus Kampl1, Franz Schanovsky1, Oskar Baumgartner1, Markus Karner1 (1. Global TCAD Solutions GmbH)
