SISPAD2026
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OralSession 11: AI

[Session 11]Session 11: Artificial Intelligence and Machine Learning

Wed. Sep 30, 2026 1:00 PM - 2:40 PM JST
Wed. Sep 30, 2026 4:00 AM - 5:40 AM UTC
Room A1(3rd floor)
1:00 PM - 1:20 PM JST(4:00 AM - 4:20 AM UTC)

[Session_11-01]Atomistic Modeling of Mg-Ion Implantation into GaN using an Efficient Machine-Learned Interatomic Potential

*Yuki Ohuchi1,3, Robert Stella2,3, Sabine Leroch2,3, Lado Filipovic2,3 (1. Advanced Technology Laboratory, Fuji Electric Corp. Ltd., 2. CDL for Multi-Scale Process Modeling of Semiconductor Devices and Sensors at the, 3. Inst. for Microelectronics, TU Wien)
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1:20 PM - 1:40 PM JST(4:20 AM - 4:40 AM UTC)

[Session_11-02]k-space resolved surrogate models for efficient
inverse design of optical metasurfaces

*Damien Maitre1,2, Francesco Guadagnuolo1, Jean-Philippe Banon2, Maxime Darnon2, Raphaël Clerc2, Loumi Tremas1, Mathys Le Grand1, Adam Fuchs1, Pascal Urard1, Coumba Gaye1, Olivier Jeannin1, James Downing1, Denis Rideau1 (1. STMicroelectronics, 850 rue J. Monnet BP16, 38926 Crolles, France, 2. Univ. Jean Monnet, CNRS, Institut d Optique Graduate School, Laboratoire Hubert Curien UMR 5516, F-42023, Saint-Etienne, France)
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1:40 PM - 2:00 PM JST(4:40 AM - 5:00 AM UTC)

[Session_11-03]Physics-Informed Neural Networks for Stable Drift-Diffusion Simulation and Inverse Parameter Extraction in 2D Semiconductors Devices

*Satofumi Souma1, Akiko Ueda2 (1. Kobe Univ., 2. AIST)
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2:00 PM - 2:20 PM JST(5:00 AM - 5:20 AM UTC)

[Session_11-04]A Deep Learning Framework for Fast, Unified Process and Device TCAD Simulation

*Konstantina Kovani1, Greta Chiaravalli1, Francesco Di Stefano1, Michal Dyrek1, Semin Kwak1, Vamsi Spandan Arza1, Ryota Hachiya2, Yonggwi Cho2, Hideki Minari2, Jun Komachi2, Shinya Yamakawa2, Lorenzo Servadei1 (1. AI for Chip Design Team, Sony AI, Sony Europe, Zurich, Switzerland, 2. Sony Semiconductor Solutions Corp., Tokyo, Japan)
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2:20 PM - 2:40 PM JST(5:20 AM - 5:40 AM UTC)

[Session_11-05]Machine Learning Accelerated Geometry Optimization under External Electric Fields

Yuanchen Chu1, Guido Gandus1, Kantawong Vuttivorakulchai2, Marton Voeroes1, *Hong-Hyun Park1, MinYong Jeong2, Mohammad Ali Pourghaderi2, Uihui Kwon2, Yoon-Suk Kim2, Seungmin Lee2, Woosung Choi1, Jaehoon Jeong2 (1. TCAD lab, Samsung Semiconductor Inc., 2. Computational Sci. and Engineering Team, Samsung Electronics)
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