SISPAD2026
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Session Details

OralSession 10: Defect

[Session 10]Session 10: Defects, Reliability and Variability

Wed. Sep 30, 2026 9:10 AM - 11:50 AM JST
Wed. Sep 30, 2026 12:10 AM - 2:50 AM UTC
Room A2(3rd floor)
9:10 AM - 9:30 AM JST(12:10 AM - 12:30 AM UTC)

[Session_10-01]Multi-Scale Statistical Modeling of Random Telegraph Noise in Sub-Micrometer CIS

*Jae Ho Kim1, Sungchul Kim1, Yonghee Park1, Jonhyun Go1, Jae Hoon Jung1 (1. Samsung Electronics)
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9:30 AM - 9:50 AM JST(12:30 AM - 12:50 AM UTC)

[Session_10-02]Antisite Disorder in the Native Oxide Insulator β-Bi2SeO5: A First-Principles Study

*Mina Bahrami Bahrami1, Mohammad Rasool Davoudi1, Dominic Waldhoer1, Christoph Wilhelmer1, Pedram Khakbaz1, Theresia Knobloch1, Michael Waltl1, Tibor Grasser1 (1. Institute for Microelectronics)
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9:50 AM - 10:10 AM JST(12:50 AM - 1:10 AM UTC)

[Session_10-03]A Unified Physical Model for Bias Temperature Instability in OSFETs

*Yongjia Wang1, Haotong Zhu1, Jinghan Xu1, Ligong Zhang1, Jinfeng Kang1, Xiaoyan Liu1 (1. Peking Univ.)
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10:10 AM - 10:30 AM JST(1:10 AM - 1:30 AM UTC)

Break

10:30 AM - 10:50 AM JST(1:30 AM - 1:50 AM UTC)

[Session_10-04]Modeling the Memory Window Distribution in FeFETs Considering Grain Variability

*Kenichiro Sonoda1, Shibun Tsuda1, Tadashi Yamaguchi1, Atsushi Amo1, Eiji Tsukuda1 (1. Renesas Electronics Corp.)
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10:50 AM - 11:10 AM JST(1:50 AM - 2:10 AM UTC)

[Session_10-05]Modeling Counterclockwise Current Hysteresis in Oxide Thin-Film Transistors

*Pranay Baikadi1, Benius Dunn1, Sara Ghazvini1, Julia W. P. Hsu1, William G. H. Vandenberghe1 (1. University of Texas at Dallas)
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11:10 AM - 11:30 AM JST(2:10 AM - 2:30 AM UTC)

[Session_10-06]Disentangling Hysteresis in Emerging Transistors:
Beyond Threshold Shifts to Area-Based Decomposition

*Mohammad Rasool Davoudi1, Dominic Waldhoer1, Mina Bahrami1, Alexander Karl1, Pedram Khakbaz1, Axel Verdianu1, Michael Waltl1, Theresia Knobloch1, Tibor Grasser1 (1. TU Wien (Technische Universität Wien))
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11:30 AM - 11:50 AM JST(2:30 AM - 2:50 AM UTC)

[Session_10-07]First-Principles Evaluation of p-type Conductivity in Zn-Doped Bismuth Oxyselenide (Bi2O2Se)

*Christoph Wilhelmer1, Tibor Grasser1 (1. TU Wien)
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