Presentation Information
[6-17]Experimental Study on Double-layer ZnO Resistive RAM (ReRAM) by Co-optimized Sputtering and Low-temperature ALD Processes
Junyao Mei1, Ruidong Li2, Yifang Wu1, Di Wu1, Bo Chen1, Peng Guo3, Pengpeng Sang1, Jixuan Wu1, *Xuepeng Zhan1, Jiezhi Chen1 (1. Shandong University (China), 2. Cloud Computing Equipment Industry Innovation Co., Ltd. (China), 3. Shandong Sinochip Semiconductors Co. Ltd. (China))
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