Session Details
[6]Poster Session
Sun. Jun 8, 2025 5:00 PM - 6:30 PM JST
Sun. Jun 8, 2025 8:00 AM - 9:30 AM UTC
Sun. Jun 8, 2025 8:00 AM - 9:30 AM UTC
Suzaku II(Suzaku II)
[6-01]Integration of Optimized Superlattice HfO2/ZrO2 Dielectric into High-Performance Superlattice SiGe/Si p-type GAAFETs
*Kai-Ting Huang1, Yi-Ju Yao1, Heng-Jia Chang2, Chen-You Wei1, Yu-Min Fu1, Bo-Xu Chen2, Tsai-Jung Lin1, Yung-Teng Fang2, Guang-Li Luo3, Fu-Ju Hou3, Yung-Chun Wu1,2 (1. College of Semiconductor Research, National Tsing Hua Univ. (Taiwan), 2. Dept. of Engineering and System Science, National Tsing Hua Univ. (Taiwan), 3. Taiwan Semiconductor Research Inst. (Taiwan))
[6-02]BEOL-Compatible GAAFET Hybrid Memory Based on HfO2/ZrO2 Superlattice with Morphotropic Phase Boundary
*Kuei-Chun Liao1, Chen-You Wei1, Yi-Ju Yao1, Cheng-En Wu2, Chien-Lung Chen2, Chih-Chao Yang3, Guang-Li Luo3, Fu-Ju Hou3, Yung-Chun Wu1,2 (1. College of Semiconductor Research, National Tsing Hua Univ. (Taiwan), 2. Dept. of Engineering and System Science, National Tsing Hua Univ. (Taiwan), 3. Taiwan Semiconductor Research Inst. (Taiwan))
[6-03]Study on the Application and Reliability of High-k HfO2/ZrO2 Superlattice Dielectrics in Ge Stacked Nanosheet GAAFET at 4K Ultra-Low Temperature
*KAO TZU-I1, Huang Kai-Wei1, Wei Chen-You2, Lin Yi-Wen1, Hou Fu-Ju3, Luo Guang-Li 3, Wu Yung-Chun1,2 (1. Dept. of Engineering and System Science, National Tsing Hua Univ. (Taiwan), 2. College of Semiconductor Research, National Tsing Hua Univ. (Taiwan), 3. Taiwan Semiconductor Research Inst. (Taiwan))
[6-04]Enhanced Reliability and Wake-Up Free Behavior of HfO2/ZrO2 Superlattice FeRAM With Triple-Level Cell Using High- and Low-Temperature ALD Stacks
*Kuan-Wen Huang1, Kun-Tao Lin1, Yu-Yun Wang1, Tien-Sheng Chao1 (1. Univ. of National Yang Ming Chiao Tung (Taiwan))
[6-05]Implementation of Delay-Enabled Axons for Lightweight Neural Networks with Improving Accuracy in Edge Computing
*GuangJin Li1,3, Hao Ai1,3, HaoKai Guan1,3, LiHao Zhang1,3, YuLin Feng2, Zheng Zhou1,3, Peng Huang1,3, LiFeng Liu1,3 (1. Peking Univ. (China), 2. Beijing Info. Sci.and Tech. Univ. (China), 3. Beijing Advanced Innovation Center for Integrated Circuits (China))
[6-06]Study of Single-Photon Detection Using a Back-Gated Si Single-Electron Transistor
*Shogo Miyagawa1, Jeygopi Panisilvam1, Pooja Sudha2, Arup Samanta2, Daniel Moraru1 (1. Shizuoka Univ. (Japan), 2. IIT Roorkee (India))
[6-07]An Experimental Study on Hot-hole Injection (HHI) in Floating-gate (FG) Flash Memory
*Chang Chen1, Yang Feng1, Jixuan Wu1, Jing Liu2, Junyu Zhang3, Xuepeng Zhan1, Jiezhi Chen1 (1. Shandong University (China), 2. Institute of Microelectronics of Chinese Academy of Sciences (China), 3. Neumem Co., Ltd (China))
[6-08]BEOL-Compatible Annealing Effects on Properties of ALD NbOX Films
*Gaoqi Yang1, Ruiqing Xie1, Linbo Shan1, Jiye Li1, Zongwei Wang1,2, Yimao Cai1,2 (1. School of Integrated Circuits, Univ. of Peking (China), 2. Beijing Advanced Innovation Center for Integrated Circuits (China))
[6-09]Multi-Level Split Weight Learning for Multi-Cell ReRAM Computation-in-Memory
*Rei Kusunose1, Seiji Adachi1, Ayane Matsuzaki1, Takao Marukame1, Kota Ando1, Tetsuya Asai1 (1. Hokkaido Univ. (Japan))
[6-10]BEOL-Compatible Microwave Annealing of HfO2/ZrO2 Superlattice Super High-K: Stabilizing Morphotropic Phase Boundaries and Low Leakage Current
*Chen-You Wei1, Yu-Hong Chen2, Yi-Ju Yao1, Guang-Li Luo3, Fu-Ju Hou3, Yung-Chun Wu1,2 (1. College of Semiconductor Research, National Tsing Hua Univ. (Taiwan), 2. Dept. of Engineering and System Science, National Tsing Hua Univ. (Taiwan), 3. Taiwan Semiconductor Research Inst. (Taiwan))
[6-11]Design Optimization of SiC CMOS FinFET for High-Temperature Next-generation SoC Logic Applications
*Tae Seong Kwon1,2, Young Jo Kim1, Hyoung Woo Kim1, Young Jun Yoon3, Jae Hwa Seo1, Sung Yun Woo2 (1. Korea Electrotechnology Research Inst. (KERI) (Korea), 2. Kyoungpook National Univ. (Korea), 3. Gyeongkuk National Univ. (Korea))
[6-12]XNOR Logic Implementation Using a Single Steep-Switching
Positive Feedback Device
*Jisung Im1, Hansol Kim1, Hojin Moon1, Eunjeong Jang1, Jong-Ho Bae2, Sung Yun Woo1 (1. Kyungpook National Univ. (Korea), 2. Yonsei Univ. (Korea))
[6-13]Reliability Characterizations on the Hybrid Hot-Cold Data Conversion in 3D NAND Flash Memory under Various Temperatures
Yujiao Ding1, Ruidong Li2, Yining Zhou1, Xinghao Wang1, Peng Guo3, Yixuan Fan1, Pengpeng Sang1, Jixuan Wu1, *Xuepeng Zhan1, Jiezhi Chen1 (1. Shandong Univ. (China), 2. Cloud Computing Equipment Industry Innovation Co., Ltd (China), 3. Shandong Sinochip Semiconductors Co. Ltd, Jinan, China (China))
[6-14]Flash-based Computing-in-Memory (CiM) Architectures for High-accuracy Classification
*Yixuan Fan1, Yang Feng1, Jixuan Wu1, Jing Liu2, Junyu Zhang3, Zhi Liu1, Xuepeng Zhan1, Jiezhi Chen1 (1. Shandong University (China), 2. Institute of Microelectronics of Chinese Academy of Sciences (China), 3. Neumem Co Ltd. (China))
[6-15]Synaptic Emulated by Double-layer ZnO Resistive RAM (ReRAM) via Optimized Sputter and Low-temperature ALD Process
*Xuepeng Zhan1, Junyao Mei1, Yuzhe Hu1, Yifan Wu1, Hongyang Zhang1, Pengpeng Sang1, Jixuan Wu1, Jiezhi Chen1 (1. Shandong University (China))
[6-16]Learning with Fewer States: A Robust On-Chip Learning Algorithm Resilient to Conductance State Constraints in RRAM-based Neural Networks
*Zhixing Cai1, Jingwei Sun1, Zongwei Wang1, Zhizhen Yu1, Ruiqing Xie1, Zezhi Cheng1, Lin Bao1, Zheng Zhou1, Ling Liang1, Yimao Cai1 (1. Peking Univ. (China))
[6-17]Experimental Study on Double-layer ZnO Resistive RAM (ReRAM) by Co-optimized Sputtering and Low-temperature ALD Processes
Junyao Mei1, Ruidong Li2, Yifang Wu1, Di Wu1, Bo Chen1, Peng Guo3, Pengpeng Sang1, Jixuan Wu1, *Xuepeng Zhan1, Jiezhi Chen1 (1. Shandong University (China), 2. Cloud Computing Equipment Industry Innovation Co., Ltd. (China), 3. Shandong Sinochip Semiconductors Co. Ltd. (China))
[6-18]Reliability Analysis of CFETs Under Various NBTI Conditions
*Hsiang-Ting Kung1, Narasimhulu Thoti2, Hannu-Pekka Komsa2, Ying-Tsan Tang1 (1. Department of Electrical Engineering, National Central Univ. (Taiwan), 2. Microelectronics Res. Unit, Faculty of Info. Tech. and Electrical Engineering, Univ. of Oulu (Finland))
[6-19]A Ballistic Transport Model for Nanosheet CFETs with Si(100), (110), and (111) Channel Orientations
*YUNGCHIN YANG1 (1. National Cheng Kung Univ. (Taiwan))
[6-20]Quantitative Analysis of Endurance–dependent Charge Trapping Dynamics in Ferroelectric Field–Effect Transistors with Temperature Effects
*Hyojin Yang1, Haesung Kim Kim1, Changhyeon Han2, Yoon Jung Lee1, Sung-Jin Choi1, Dae Hwan Kim1, Dong Myong Kim1,4, Daewoong Kwon2, Jong-Ho Bae3 (1. Kookmin Univ. (Korea), 2. Hanyang Univ. (Korea), 3. Yonsei Univ. (Korea), 4. Daegu Gyeongbuk Inst. of Sci. & Tech. (Korea))
[6-21]Analysis of Grain Boundary Effects Based on Location in a Diode-Type NAND Flash Memory Cell
*Jinsu Kim1, Hansol Kim1, Hojin Moon1, Wonjun Song1, Jong-Ho Bae2, Nagyong Choi3, Sung Yun Woo1 (1. Kyungpook National Univ. (Korea), 2. Yonsei Univ. (Korea), 3. Seoul National Univ. (Korea))
[6-22]Evaluation of In-Memory Logic Computation for Ferroelectric Capacitive Memory
*Hao-Hsiang Chang1, Po-Tsang Huang1, Pin Su1 (1. National Yang Ming Chiao Tung University (Taiwan))
[6-23]Volatile and Nonvolatile Resistive Switching in Wafer-Scale MoS2 Memristors
*Yuan Fa1,2, Dennis Braun2, Lukas Völkel2, Holger Lerch1, Holger Kalisch2, Michael Heuken2,3, Andrei Vescan2, Zhenxing Wang1, Max C. Lemme1,2 (1. AMO GmbH (Germany), 2. RWTH Aachen Univ. (Germany), 3. AIXTRON SE (Germany))
[6-24]Impact of Oxygen Vacancies on Switching Behavior of Ferroelectric HfO2 from First Principle
*Chenxi Yu1, Xujin Song1, Jiajia Zhang1, Dijiang Sun1, Xiaoyan Liu1, Fei Liu1, Jinfeng Kang1 (1. Peking Univ. (China))
[6-25]Tunable Tunnel Coupling in Vertically Stacked Symmetric FinFET-Based Ge Double Quantum Dots
*Hua Yang1, Wei-Yuan Lai1, Ying-tsan Ethan Tang1 (1. National Central Univ. (Taiwan))
[6-26]Numerical Investigation of Electrical Performance and Scaling Properties in 6T1C IGZO-Based Synaptic Devices
*Ye-Han Kwon1, Youngchae Roh2, Changhoon Joe2, Sangbum Kim2, Sung-Min Hong1 (1. Gwangju Inst. of Sci. and Tech. (Korea), 2. Seoul National Univ. (Korea))
[6-27]Investigation of Asymmetric Ferroelectric Switching in AlScN MFM Capacitors
*Hirofumi Nishida1, Si-Meng Chen1, Takuya Hoshii1, Kazuo Tsutsui1, Hitoshi Wakabayashi1, Kuniyuki Kakushima1 (1. Institute of Science Tokyo (Japan))
[6-28]Phosphorus Incorporation and Ionization in Ultra-Thin Silicon Films
*Andrea Pulici1,2, Gabriele Seguini1, Marco Fanciulli2, Michele Perego1 (1. CNR-IMM, Unit of Agrate Brianza (Italy), 2. Università degli Studi di Milano-Bicocca (Italy))
[6-29]All-in-one Monolithic 3D Heterostructured Integration of BEOL- Complementary N-Si FinFET / P-CNFET for Smart Edge Processing
*SHUANG Liu1,2, Feixiong Wang1,2, Heyi HUANG1,2, Yadong Zhang1,2, Yanqing Li1,2, Yanzhao Wei1,2, Huaxiang Yin1,2 (1. State Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics of the Chinese Academy of Sciences (China), 2. School of Integrated Circuits, University of Chinese Academy of Sciences (China))
[6-30]Machine Learning-Driven Modeling for Fast and Accurate Z-Interference Estimation in 3D NAND Scaling
*Hyeon Seo Yun1, Jong Kyung Park1 (1. Seoul National Univ. of Sci. and Tech (Korea))
[6-31]The Impacts of Different Producing Methods on the Memristive Performance in Monolayer CBRAM
*Xuepeng Zhan1, Yuwei Qu1, Hongyang Zhang1, Yifan Wu1, Di Wu1, Bo Chen1, Yixuan Fan1, Pengpeng Sang1, Jixuan Wu1, Jiezhi Chen1 (1. Shandong University (China))
[6-32]Displacement Damage Effects Induced by Proton Irradiation in β-Ga2O3 Schottky Barrier Diodes
*YOUNGJO KIM1, Tae Seong KWON2,1, Sung Yun WOO2, Young Jun YOON3, Jae Hwa SEO1 (1. Korea Electrotechnology Research Inst. (Korea), 2. Kyungpook National Univ. (Korea), 3. Gyeongkuk National Univ. (Korea))
[6-33]Determination of sensitivity limits for single molecule detection using single-electron sensing devices.
*Alexei O Orlov1, Istiaque Rahaman1, Gergo P Szakmany1, Gregory L Snider1 (1. University of Notre Dame (United States of America))