Presentation Information

[6-20]Quantitative Analysis of Endurance–dependent Charge Trapping Dynamics in Ferroelectric Field–Effect Transistors with Temperature Effects

*Hyojin Yang1, Haesung Kim Kim1, Changhyeon Han2, Yoon Jung Lee1, Sung-Jin Choi1, Dae Hwan Kim1, Dong Myong Kim1,4, Daewoong Kwon2, Jong-Ho Bae3 (1. Kookmin Univ. (Korea), 2. Hanyang Univ. (Korea), 3. Yonsei Univ. (Korea), 4. Daegu Gyeongbuk Inst. of Sci. & Tech. (Korea))

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