Presentation Information
[6-21]Analysis of Grain Boundary Effects Based on Location in a Diode-Type NAND Flash Memory Cell
*Jinsu Kim1, Hansol Kim1, Hojin Moon1, Wonjun Song1, Jong-Ho Bae2, Nagyong Choi3, Sung Yun Woo1 (1. Kyungpook National Univ. (Korea), 2. Yonsei Univ. (Korea), 3. Seoul National Univ. (Korea))
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