[7] Advanced Electronics on New Materials

9:15 AM - 9:35 AM JST(12:15 AM - 12:35 AM UTC)

[7-03] Enhanced Electrical Characteristics of Ge MOS Device by In-situ Low Temperature H2 Treatment

*Pai-Yu Hsiao¹, Dun-Bao Ruan², Kuei-Shu Chang-Liao¹, Hsin-I Yeh¹, Chih-Wei Liu¹, Yu-Hsuan Chien¹, Bo-Lien Kuo¹, Kai-Chun Yang¹, Cheng-Han Li¹, Cheng-Yu Wu¹ (1. National Tsing Hua Univ. (Taiwan), 2. Fuzhou Univ. (China))