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Session 7: Advanced Electronics on New MaterialsSession 7: Advanced Electronics on New Materials

[7]Advanced Electronics on New Materials

Mon. Jun 9, 2025 8:30 AM - 10:35 AM JST
Mon. Jun 9, 2025 11:30 PM - 1:35 AM UTC
Suzaku III(Suzaku III)
Chair:Louis Hutin(CEA Leti), Tsunaki Takahashi(The University of Tokyo)
8:30 AM - 8:55 AM JST(11:30 PM - 11:55 PM UTC)

[7-01]Capacitor-less IGZO based gain cell (2T0C): A disruptive technology for high-density eDRAM and 3D-DRAM

*Attilio Belmonte1, Hyungrock Oh1, Nouredine Rassoul1, Subhali Subhechha1, Adrian Chasin1, Daisuke Matsubayashi1, Yiqun Wan1, Harold Dekkers1, Romain Delhougne1, Gouri Sankar Kar1 (1. imec (Belgium))
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8:55 AM - 9:15 AM JST(11:55 PM - 12:15 AM UTC)

[7-02]BEOL-Compatible IGZTO Thin-Film Transistors with Ultra-High Positive Bias Stress Stability for Advanced Electronics

*Kai Chen1,2, Xiaonan Wu1,2, Ran Cheng1, Rui Zhang1, Junkang Li1, Yunlong Li1,2 (1. Zhejiang Univ. (China), 2. Zhejiang ICsprout Semiconductor Corp. (China))
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9:15 AM - 9:35 AM JST(12:15 AM - 12:35 AM UTC)

[7-03]Enhanced Electrical Characteristics of Ge MOS Device by In-situ Low Temperature H2 Treatment

*Pai-Yu Hsiao1, Dun-Bao Ruan2, Kuei-Shu Chang-Liao1, Hsin-I Yeh1, Chih-Wei Liu1, Yu-Hsuan Chien1, Bo-Lien Kuo1, Kai-Chun Yang1, Cheng-Han Li1, Cheng-Yu Wu1 (1. National Tsing Hua Univ. (Taiwan), 2. Fuzhou Univ. (China))
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9:35 AM - 9:55 AM JST(12:35 AM - 12:55 AM UTC)

[7-04]Synergistic Impact of Random Phase Distribution and Polarization Strength Variations on FeFET Across Grain Sizes and Ferroelectric Percentages

*Yi-Ming Tseng1, Vita Pi-Ho Hu1 (1. National Taiwan Univ. (Taiwan))
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9:55 AM - 10:15 AM JST(12:55 AM - 1:15 AM UTC)

[7-05]Unified Memcapacitor-Memristor Memory for Synaptic
Weights and Neuron Temporal Dynamics

*Simone D'Agostino1, Marco Massarotto2, Tristan Torchet3, Filippo Moro3, Niccolò Castellani1, Laurent Grenouillet1, Yann Beilliard1, David Esseni2, Melika Payvand3, Elisa Vianello1 (1. CEA, LETI, Université Grenoble Alpes, Grenoble, France (France), 2. Università degli Studi di Udine, 33100 Udine, Italy (Italy), 3. Institute for Neuroinformatics, Institute of Neuroinformatics, University of Zurich and ETH Zurich, Zurich, Switzerland (Switzerland))
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10:15 AM - 10:35 AM JST(1:15 AM - 1:35 AM UTC)

[7-06]Poly-Si Nanosheet FETs With Vertical C-Shaped Channel Using Pulse Laser Crystallization

Jinbiao Liu2, Zhuo Chen2, Yongkui Zhang2, Junfeng Li2, Xianglie Sun1, *Shujuan Mao1, Guilei Wang1, Chao Zhao1, Huilong Zhu2, Jun Luo2 (1. Beijing Superstring Academy of Memory Technology (China), 2. Institute of Microelectronics, Chinese Academy of Sciences (China))
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