SNW2025
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Session 5: Memory and Related TechnologiesSession 5: Memory and Related Technologies

[5]Memory and Related Technologies

Sun. Jun 8, 2025 3:05 PM - 4:45 PM JST
Sun. Jun 8, 2025 6:05 AM - 7:45 AM UTC
Suzaku III(Suzaku III)
Chair:Minoru Oda(Kioxia Co.), Katsuhiko Nishiguchi(NTT Basic Research Laboratories)
3:05 PM - 3:25 PM JST(6:05 AM - 6:25 AM UTC)

[5-01]Observation of State Change in 40nm TaOX ReRAM Cells during Read-disturb

*Shota Suzuki1, Naoko Misawa1, Chihiro Matsui1, Ken Takeuchi1 (1. Univ. of Tokyo (Japan))
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3:25 PM - 3:45 PM JST(6:25 AM - 6:45 AM UTC)

[5-02]Performance Evaluation of 3D 1T-nC Ferroelectric RAM Architectures

Wei-Chen Chen1, *Hang-Ting Lue1, Keh-Chung Wang1, Chih-Yuan Lu1 (1. Macronix International Co., Ltd (Taiwan))
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3:45 PM - 4:05 PM JST(6:45 AM - 7:05 AM UTC)

[5-03]Thermally Stable Vertical-Stacked 1T1C FeRAM with Record 3.3 μF/cm2 CMW Based on Unified Ferroelectric-Oxide Semiconductor Stack

Xujin Song1,2, *Dijiang Sun1,2, Jiajia Zhang1,2, Chenxi Yu1,2, Xiaoyan Liu1,2, Jinfeng Kang1,2 (1. Peking University (China), 2. Beijing Advanced Innovation Center for Integrated Circuits (China))
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4:05 PM - 4:25 PM JST(7:05 AM - 7:25 AM UTC)

[5-04]InAs/AlSb III-V NVM with High-speed (5ns) Low-power (1V) QW-tunnel Program for 10-year Storage by 2DEG-enhanced Retention

*Jun Sheng Hou2, Zi Yao Chung2, Min Jie Chen2, Ren Fu Ye2, Li Cheng Chen2, E Ray Hsieh1, Jen-Inn Chyi2 (1. National Yang Ming Chiao Tung University (Taiwan), 2. National Central University (Taiwan))
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4:25 PM - 4:45 PM JST(7:25 AM - 7:45 AM UTC)

[5-05]A Novel Cross-Point Ferroelectric-Capacitor Array based Parallel In-Memory Encryption for Energy-Efficient Secure-AI Applications

*Shengjie Cao1, Weikai Xu1, Zhiyuan Fu2, Minyue Deng1, Zebin Zhang1, Qianqian Huang1, Ru Huang1 (1. Peking Univ. (China), 2. Southeast Univ. (China))
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