[C-10] 電子デバイス

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[C-10-04] Near-infrared sensitivity improvement of silicon image sensor by plasmonic diffraction designed according to chief ray angles

◎△Koya Okazaki¹, Takahito Yoshinaga¹, Kazuma Hashimoto¹, Nobukazu Teranishi², Atsushi Ono^1,2 (1. Shizuoka Univ., 2. Research Institute of Electronics, Shizuoka Univ.)

Keywords:

Image sensor,Plasmonic,Near-infrared,Silicon