Session Details

[C-10]電子デバイス

Tue. Sep 10, 2024 9:45 AM - 11:00 AM JST
Tue. Sep 10, 2024 12:45 AM - 2:00 AM UTC
Building No.2 2F 2-276(Nippon Institute of Technology)
Chair:Masatoshi Koyama(Osaka Institute of Technology), Yoshitsugu Yamamoto(Mitsubishi Electric Corp.)

[C-10-01]Evaluation of SiC pn diodes fabricated by CO2 laser impurity doping

〇Akihiro Ikeda1, Yasushi Kodama2, Kazuyuki Yoneya2 (1. Sojo Univ., 2. SEIDENSHA Electronics Co., Ltd.)

[C-10-02]A Measurement Method of Silicon Quantum Dot by TMR Sensor

〇Seiji Komatsu1, Takayuki Kawahara1 (1. Department of Electrical Engineering, Tokyo University of Science)

[C-10-03]Cathodoluminescence analysis of nitride semiconductor nanopillar crystals based on multi-crystalline Si substrates

〇△Houyao Xue1, Shuhang Gou1, Tsubasa Saito1, Yuichi Sato1 (1. Akita Univ.)

[C-10-04]Near-infrared sensitivity improvement of silicon image sensor by plasmonic diffraction designed according to chief ray angles

◎△Koya Okazaki1, Takahito Yoshinaga1, Kazuma Hashimoto1, Nobukazu Teranishi2, Atsushi Ono1,2 (1. Shizuoka Univ., 2. Research Institute of Electronics, Shizuoka Univ.)

[C-10-05]Optimization of Oscillation Frequency and Power Consumption
by Voltage Controlled Ring Oscillator Using Dual-Gate Oxide Semiconductor Thin-Film Transistor

◎Yasutaka Tokimoto1, Muhamad Affiq Bin Misran1, Reiji Hattori1 (1. Interdisciplinary Graduate School of Engineering Sciences, Kyushu University)