[C-3_C-4] Optoelectronics / Lasers and Quantum Electronics

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[C-3_C-4-36] Investigation of InP-based InGaAs/InGaAs Multiple Width Quantum Wells with Broadband Optical Gain in the 2 μm Wavelength Region

〇Gensai Tei¹, Takahiko Shindou¹, Hiroki Sugiyama², Makoto Shimokozono¹, Yuta Ueda¹, Fumito Nakajima¹ (1. Device Innovation Center, NTT, Inc., 2. Device Technology Labs., NTT, Inc.)

Keywords:

Gas sensing,Strained quantum well,Tunable laser,Epitaxial growth,2 μm Wavelength