[C-10_C-11] Electron Devices/Silicon Device and Materials

8:45 AM - 9:00 AM JST(11:45 PM - 12:00 AM UTC)

[C-10_C-11-01] Evaluation Accuracy of SiC Ohmic Contact Resistivity Using Transfer Length Method

〇Koji Kotani¹, Yuma Ohashi¹, Takao Komiyama¹, Yasunori Chonan¹, Hiroyuki Yamaguchi¹, Naoki Wakabayashi² (1. Akita Prefectural University, 2. Sumitomo Heavy Industries)

Keywords:

Transfer Length Method,SiC,Contact Resistivity,Device Simulation

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