Presentation Information
[C-12-30]Design of Closed-Loop Active Gate Driver IC with Real-Time Gate Current Control for GaN HEMTs
〇Juntian Chen1, Hiroki Fukunaga1, Bingchen Wu1, Daichi Hirotsuka1, Yaogan Liang1, Michihiro Ide1, Makoto Takamiya1 (1. The University of Tokyo)
Keywords:
active gate driver,GaN HEMT,switching loss,overshoot,22 nm,feedback
GaN HEMTs enable low switching loss (ELoss) through fast switching but induce current overshoot (IOVERSHOOT), requiring gate drivers to optimize gate current (IG). To break the trade-off between ELoss and IOVERSHOOT of conventional gate drivers (CGDs) with fixed IG, active gate drivers (AGDs) dynamically modulate IG. While closed-loop AGDs handle load and temperature operating variations, existing designs suffer from over 10 ns feedback delay from sensing input to dynamic changing IG, only achieving real-time control for IGBTs and preventing them for GaN HEMTs. Therefore, we use 22 nm CMOS process to minimize delay and a VsS sensor detecting the voltage across the parasitic inductance between Kelvin and power sources, proposing the first closed-loop AGD IC with VsS sensor for GaN HEMTs. Simulated in a 400 V, 30 A double-pulse test, it achieved about 0.64 ns loop delay and simultaneously reduced ELoss by 7.6% and IOVERSHOOT by 46.7% compared to CGDs.