Presentation Information
[C-2A-06]A 7GHz GaN Doherty Power Amplifier Module for 5G Massive MIMO Base Stations
◎Nagito Ishida1, Kento Saiki1, Katsuya Kato1, Yutaro Yamaguchi1, Shuichi Sakata1 (1. Mitsubishi Electric Corporation)
Keywords:
GaN HEMT,Doherty Power Amplifier,5G,Digital Pre-Distortion,massive MIMO
As data traffic continues to increase, mobile communication systems are required to achieve higher speed and larger capacity. In WRC-23, the 6.425–7.125 GHz band was allocated as Upper FR1. In addition, discussions are ongoing regarding the allocation of the 7.125–8.4 GHz band as Lower FR3. Accordingly, Doherty amplifiers operating in these frequency bands are required.
In conventional methods using a multi-chip configuration with SMD components and laminated substrates, the effects of bond-wire reactance and parasitic capacitance become more significant as the frequency increases, thereby making the design conditions for realizing Doherty operation much more stringent. In this report, we propose a method that enlarges the operating region by not compensating for part of the parasitic capacitance on the main amplifier side. Furthermore, we designed and fabricated a two-stage GaN Doherty amplifier module using this method, and present the results.
In conventional methods using a multi-chip configuration with SMD components and laminated substrates, the effects of bond-wire reactance and parasitic capacitance become more significant as the frequency increases, thereby making the design conditions for realizing Doherty operation much more stringent. In this report, we propose a method that enlarges the operating region by not compensating for part of the parasitic capacitance on the main amplifier side. Furthermore, we designed and fabricated a two-stage GaN Doherty amplifier module using this method, and present the results.