[C-3_C-4] Optoelectronics / Lasers and Quantum Electronics

8:45 AM - 9:15 AM JST(11:45 PM - 12:15 AM UTC)

[C-3_C-4-10] Inverted InGaAs/InP photodiode for beyond 200 Gbaud applications.

〇Fumito Nakajima¹, Yuki Yamada¹ (1. NTT, Inc.)

Keywords:

photodiode,ultra-high speed

We present a vertical-illumination InGaAs/InP photodiode (PD) for beyond 200 Gbaud applications. Interference-based absorption enhancement resulted in a 0.55-A/W responsivity for O-band. The PD features an electric field confinement by an inverted p-down structure, which results in a low dark current and excellent reliability.