Presentation Information
[C-6-04]Doping-Concentration Dependence of Li2O-Doped Amorphous Carbon Thin Films
〇Shunta Haniu1, Kento Yajima1, Hiroyasu Ishikawa1 (1. Shibaura Institute of Technology)
Keywords:
Semiconductor,Amorphous-Carbon,Thin Film
Amorphous carbon (a-C) is a semiconductor material whose band gap can be controlled within the range of 0.2 to 3.0 eV by adjusting the sp2/sp3 bonding ratio, making it a promising candidate for light-absorbing layers in solar cells. However, high resistivity, low photoconductivity, and the difficulty of controlling the conduction type remain critical challenges. In this study, because p-type conductive a-C thin film samples were stably obtained via Li2O doping, we investigated the effects of the Li2O doping ratio on the structural, optical, and electrical properties of the a-C thin films, and examined their relationship with the manifestation of p-type conduction. Samples doped with Li2O at molar ratios ranging from 0.1 to 2% were fabricated using RF magnetron sputtering and subsequently evaluated.