[C-6] Electronic Component Parts and Materials

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[C-6-07] Fabrication of photodetectors made of oxide semiconductor nanostructures grown by atmospheric-pressure chemical vapor deposition and their UV detecting properties

〇Tomoaki Terasako¹, Rio Horiuchi¹, Tomoya Yamada¹, Souta Sugahara², Masakazu Yagi³ (1. Graduate School of Science and Engineering, Ehime University, 2. Faculty of Engineering, Ehime University, 3. National Institute of Technology, Kagawa College)

Keywords:

Oxide Semiconductors,Atmospheric-pressure chemical vapor deposition,Nanowires,photodetector

本研究では，AP-CVD法においてVLS成長機構を利用して成長したZnO，β-Ga₂O₃およびZnGa₂O₄ナノ構造を用いた抵抗変化型の光検出器の作製とその照射光波長依存性について報告する．