Presentation Information
[PS-02-05]Area-Ratio Engineered AlScN/GaN Transistors for Enhanced Ferroelectric Switching
〇Jongmin Park1, Hyeongjun Joo1, Geonwook Yoo1,2 (1. Department of Intelligent Semiconductor, Soongsil University (Korea), 2. School of Electronic Engineering, Soongsil University (Korea))