[PS-02] 02: Advanced and Emerging Memories / New Applications

[PS-02-11] Coupled Al₂O₃ Interlayer and HZO Ferroelectric Layer Thickness Engineering for Memory Window–Operation Voltage–Retention Optimization in MIFIS FeFETs

〇Jia Yang^1,2, Runhao Han¹, hu Tao², Kaiyi Li^1,2, Xianzhou Shao², Hao Xu², Xiaolei Wang² (1. The School of Advanced Interdisciplinary Sci., Univ. of Chinese Academy of Sci. (China), 2. State Key Lab. of Fabrication Tech. for Integrated Circuits, Inst. of Microelectronics of the Chinese Academy of Sci. (China))