Presentation Information
[PS-02-20]Co-Optimization of Channel Interlayer Nitridation and Al2O3/HfO2/Al2O3 Gate Interlayer for 3D NAND Compatible FeFETs
〇Min Liao1, Hao Xu1, Runhao Han1, Xianzhou Shao1, Xinpei Jia1, Yuanyuan Zhao1, Xiaoyu Ke1, Xiaoqing Sun1, Junshuai Chai1, Jinjuan Xiang2, Xiaolei Wang1, Wenwu Wang1 (1. Institute of Microelectronics, Chinese Academy of Sciences (China), 2. Beijing Superstring Academy of Memory Technology (China))