Presentation Information
[PS-02-27]Nb/TiN Gate-Stack Engineering for Enhanced Polarization Switching and Access- Rate Reliability in HZO Ferroelectric MFIS Capacitors
〇Yu-Ting Chen1, Cheng-Hung Wu1, Hsuan-Yi Yang1, Yi-Cheng Lin1, Chun-Jung Su2,3, Vita Pi-Ho Hu1 (1. Graduate Inst. of Electronics Eng., National Taiwan Univ. (Taiwan), 2. Dept. of Electrophysics, National Yang Ming Chiao Tung Univ. (Taiwan), 3. Taiwan Semiconductor Res. Inst., National Inst. Applied Res. (Taiwan))