講演情報
[1E03]照射欠陥によるSiC中のフォノン輸送抑制に関する研究
*ヨウ チヨウ1、ZHU ZHENBO1、CHEN XINRUN1、NISHIMURA YOSUKE1、MURAKAMI KENTA1、ABE HIROAKI1 (1. 東大)
キーワード：
分子動力学、炭化ケイ素、熱伝導率、照射効果
Silicon carbide is a promising material for advanced nuclear systems, but irradiation-induced defects degrade its thermal conductivity, threatening heat dissipation. Using a molecular dynamics–based wave packet scattering model, we systematically analyze phonon scattering by various defects, including amorphized clusters, disordered regions, voids, and dislocation loops. Results show scattering strongly depends on the phonon wavelength–defect size ratio and defect morphology. Even defects with similar cross sections can differ in mode conversion and energy redistribution. This work provides atomic-level insights into thermal conductivity degradation in irradiated SiC and offers a framework for studying phonon–defect interactions in complex ceramics under extreme conditions.
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