Presentation Information
[1E03]Suppression of Phonon Transport by Irradiation Defects in SiC: An Atomic-Level Study
*CHAO YANG1, ZHENBO ZHU1, XINRUN CHEN1, YOSUKE NISHIMURA1, KENTA MURAKAMI1, HIROAKI ABE1 (1. UTokyo)
Keywords:
Molecular Dynamic Simulation,SiC,Thermal Conductivity,Irradiation Effects
Silicon carbide is a promising material for advanced nuclear systems, but irradiation-induced defects degrade its thermal conductivity, threatening heat dissipation. Using a molecular dynamics–based wave packet scattering model, we systematically analyze phonon scattering by various defects, including amorphized clusters, disordered regions, voids, and dislocation loops. Results show scattering strongly depends on the phonon wavelength–defect size ratio and defect morphology. Even defects with similar cross sections can differ in mode conversion and energy redistribution. This work provides atomic-level insights into thermal conductivity degradation in irradiated SiC and offers a framework for studying phonon–defect interactions in complex ceramics under extreme conditions.
Comment
To browse or post comments, you must log in.Log in
