[16p-B1-1~14] 13.4 Si系プロセス・Si系薄膜・MEMS・装置技術

14:00 〜 14:15奨励賞エントリー英語発表

[16p-B1-5] Performance Improvement of n-channel TFT on Solid-Phase Crystallized poly-Ge by Channel Width Shrinking

〇linyu huang¹, atsuki morimoto¹, kota igura², takamitsu ishiyama², kaoru toko², dong wang¹, keisuke yamamoto¹ (1.Kyushu Univ., 2.Univ. of Tsukuba)

キーワード：

polycrystalline Ge、TFT、inversion mode

Our group succeeded in the synthesis of high-quality polycrystalline (poly-) Ge thin films using the advanced solid-phase crystallization (SPC) technique on glass and demonstrated accumulation mode p-channel TFT on the SPC-Ge. Recently, we have also demonstrated n-channel TFT to realize a CMOS circuit on our SPC-Ge. However, its performance has room for improvement, notably its ON/OFF ratio. In this paper, we introduce the shrunk channel width design to our inversion mode n-TFT on poly-Ge. By comparing with conventional channel structure, it shows a positive effect on the ON/OFF ratio of n-channel poly-Ge TFT.