講演情報
[16p-B2-5]Lattice temperature dependence of electron cooling in semiconductor double barrier heterostructures
〇Xiangyu Zhu1, Alec Cochard1,4, Gueric Etesse2, Marc Bescond1,2, Gerald Bescond3, Naomi Nagai1, Kazuhiko Hirakawa1 (1.IIS/LIMMS, UTokyo, 2.IM2NP-CNRS, AMU, 3.Ecole Normale Superieure, 4.ESPCI Paris)
キーワード：
semiconductor、quantum well、thermionic cooling
Managing rapid increase in heat power densities associated with device miniaturization is a major technological challenge. Development of new efficient cooling technologies is therefore urgently required for future progress in electronics. Solid-state cooling devices can be one answer, owing to their high efficiency and compatibility for integration. To achieve efficient cooling, we have been working on asymmetric double barrier heterostructures (hereafter, ADB structure) to utilize thermionic cooling effect.
In the ADB structures, cold electrons are first injected into the quantum well (QW) by resonant tunneling through the thin barrier (emitter barrier). Subsequently, hot electrons are removed by thermionic emission over the second thick barrier (collector barrier). This sequential two-step conduction process is essential for the cooling effect. In order to optimize the cooling effect, it is necessary to understand the sequential electron transport and the electron temperature in the QW region. To quantitatively understand the conduction process, we have investigated the electron cooling behavior in structure ADB-A by measuring photoluminescence (PL) spectra at various bias voltages. Then, we have developed a theory based on the sequential two-step current and the energy rate equation.
Furthermore, in order to optimize the performance of ADB structures, we have investigated the structure-dependence of electron cooling. Using an energy balance equation, we discussed how the structural parameters affect the cooling behavior. The order of electron cooling is determined mainly by the energy difference Vb-E1. Structures with various collector barrier heights were designed in order to modify Vb-E1 and temperature-dependent PL measurements were performed.
In the ADB structures, cold electrons are first injected into the quantum well (QW) by resonant tunneling through the thin barrier (emitter barrier). Subsequently, hot electrons are removed by thermionic emission over the second thick barrier (collector barrier). This sequential two-step conduction process is essential for the cooling effect. In order to optimize the cooling effect, it is necessary to understand the sequential electron transport and the electron temperature in the QW region. To quantitatively understand the conduction process, we have investigated the electron cooling behavior in structure ADB-A by measuring photoluminescence (PL) spectra at various bias voltages. Then, we have developed a theory based on the sequential two-step current and the energy rate equation.
Furthermore, in order to optimize the performance of ADB structures, we have investigated the structure-dependence of electron cooling. Using an energy balance equation, we discussed how the structural parameters affect the cooling behavior. The order of electron cooling is determined mainly by the energy difference Vb-E1. Structures with various collector barrier heights were designed in order to modify Vb-E1 and temperature-dependent PL measurements were performed.
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