[16p-C302-1~18] 13.5 デバイス／配線／集積化技術

14:30 〜 14:45奨励賞エントリー英語発表

[16p-C302-5] A Nanosheet Oxide Semiconductor FET Using ALD InZnOx Channel

〇(D)Sunghun Kim¹, Kaito Hikake¹, Zhuo Li¹, Takuya Saraya¹, Toshiro Hiramoto¹, Masaharu Kobayashi^1,2 (1.IIS, The Univ. of Tokyo, 2.d.lab, The Univ. of Tokyo)

キーワード：

Oxide semiconductor、Monolithic 3D、IZO

2D scaling for high-performance computing is near the physical limit and monolithic 3D (M3D) integration is a promising alternative solution for high density and energy-efficiency. In the M3D integration, upper-layer FETs must be fabricated at low temperature (<400 °C) to ensure the integrity of BEOL interconnects and the property of FEOL devices. Oxide semiconductor (OS) FETs have excellent properties such as high mobility, low leakage, and high thermal stability with fabrication process less than 400 °C. Atomic Layer Deposition (ALD) enables precise control of OS composition with high uniformity and high conformality. Although studies on individual OS compounds such as InO, IZO, IGO, and IGZO were reported, systematic study on nanosheet OS FETs with comparison of OS compounds is needed.
In this paper, we fabricate and characterize OS FETs with ALD IZO studying characteristics trade-off, and compare IZO FETs to IGO FETs to understand the effect of atomic species in InO-based OS material.