講演情報
[18a-A35-3]Relationship between the surface roughness of SiO2/Si sub. and the PVD-WS2 film
〇Jaehyo Jang1, Naoki Matsunaga1, Soma Ito1, Hitoshi Wakabayashi1 (1.Tokyo Tech)
キーワード：
Transition metal dichalcogenide、Surface roughness、Sputtering
As silicon-based FET suffer from severe short-channel effect due to scaling, the attention is moving to the 2D Transition Metal Dichalcogenide, especially Tungsten disulfide (WS2), as the future channel material. Nonetheless, enhanced crystallinity of WS2 film is necessary for device application. Although there are a plethora of factors that affect the crystallinity of PVD-WS2 film, the surface roughness of the substrate surface is undoubtedly one of the most crucial factors. However, the quantitative relationship between the surface roughness of SiO2/Si substrate and WS2 film is not yet known. Therefore, we investigate the relationship between surface roughness of SiO2/Si substrate and PVD-WS2 film in this study.
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