[18a-C301-1~9] CS.11 9.4 熱電変換、22.1 合同セッションM 「フォノンエンジニアリング」のコードシェア

9:30 〜 9:45英語発表

[18a-C301-3] Investigation of Heat Flux Sensitivity of Silicon-Large Scale Integrated Thermoelectric Device

〇(DC)Md MehdeeHasan Mahfuz¹, Taisei Mito¹, Tatsuya Hayashi¹, Takeo Matsuki¹, Takanobu Watanabe¹ (1.Waseda Univ.)

キーワード：

Heat Flux Sensor、Thermoelectric device、Siliocon-Nnowire

This research demonstrates an advancement in the realm of heat flux sensing through the development of cavity-free thermoelectric (TE) devices. Conventional heat flux sensors often face difficulty with achieving optimal detection sensitivity while minimizing interference with the measurement target. In response, our study introduces a novel approach, exploiting the advantages of cavity-free architecture to enhance thermal resistance reduction and boost heat flux sensitivity via miniaturization and large-scale integration. In this work, we investigated the heat flux sensitivity (HFS) of large-scale integrated TE devices that utilize 50592~70668 stages of silicon nanowire (Si-NW) thermoelements and, in a bileg-type device, the maximum HFS of 345 mV/W of was obtained.