[18a-C301-1~9] CS.11 9.4 熱電変換、22.1 合同セッションM 「フォノンエンジニアリング」のコードシェア

11:15 〜 11:30英語発表

[18a-C301-9] Investigation of p-type thermoelectric properties for Mn doped β-FeSi₂

〇(M2)Umar Farooq¹, Sopheap Sam², Rio Oshita¹, Hiroshi Nakatsugawa¹ (1.Yokohama Nat Univ, 2.Nat Inst for Mat Sci)

キーワード：

Semiconductor、Thermoelectricity、Mn doping

Our research study deals with the substitution of Manganese doping in Iron Silicides to improve its ZT. For all Mn doped samples, the Seebeck coefficient S is positive indicating that all Mn doping contributed to the p-type nature of FeSi₂. Furthermore, Mn doping also contributed to the reduction of bipolar effect as compared to non-doped FeSi₂. The carrier concentration effect was dominant until Fe_0.95Mn_0.05Si₂ while the effect of effective mass gets dominant from Fe_0.96Mn_0.04Si₂. The maximum Power factor PF was availed for Fe_0.97Mn_0.03Si₂ sample because of which the maximum ZT that is achieved during this research study is also for Fe_0.97Mn_0.03Si₂.