講演情報
[18a-C301-9]Investigation of p-type thermoelectric properties for Mn doped β-FeSi2
〇(M2)Umar Farooq1, Sopheap Sam2, Rio Oshita1, Hiroshi Nakatsugawa1 (1.Yokohama Nat Univ, 2.Nat Inst for Mat Sci)
キーワード：
Semiconductor、Thermoelectricity、Mn doping
Our research study deals with the substitution of Manganese doping in Iron Silicides to improve its ZT. For all Mn doped samples, the Seebeck coefficient S is positive indicating that all Mn doping contributed to the p-type nature of FeSi2. Furthermore, Mn doping also contributed to the reduction of bipolar effect as compared to non-doped FeSi2. The carrier concentration effect was dominant until Fe0.95Mn0.05Si2 while the effect of effective mass gets dominant from Fe0.96Mn0.04Si2. The maximum Power factor PF was availed for Fe0.97Mn0.03Si2 sample because of which the maximum ZT that is achieved during this research study is also for Fe0.97Mn0.03Si2.
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