[18a-P06-1~19] 13.7 化合物及びパワーデバイス・プロセス技術・評価

英語発表

[18a-P06-17] High-Temperature Reliability of Ni/Ti/Nb Ohmic Contact on p-type 4H-SiC

〇(D)Ha Thi Vu¹, Vuong Van Cuong¹, Shin-Ichiro Kuroki¹ (1.RISE,Hiroshima Univ.)

キーワード：

Ohmic contact、high temperature reliability、p type 4H-SiC、Ni/Ti、Ni/Ti/Nb

In this research, the thermal stability of Ni/Ti/Nb and Ni/Ti ohmic contact on p-type 4H-SiC at 400^oC were investigated. After rapid thermal annealing process at 1050^oC in N₂ ambient for 3 minutes, the specific contact resistances of the Ni/Ti contact and Ni/Ti/Nb contact were estimated as 10.89 mΩ.cm² and 2.56 mΩ.cm², respectively. The samples were aged at 400^oC in N₂ ambient for 100h to investigate the high-temperature reliability. When comparing with the Ni/Ti/4H-SiC sample, the Ni/Ti/Nb/4H-SiC contact exhibits a smaller specific contact resistance and better thermal stability. These results indicate that the Ni/Ti/Nb silicide is one of promising candidates for the reliable ohmic contact on p-type 4H-SiC for harsh environment applications.