[18p-A22-1~21] 21.1 合同セッションＫ 「ワイドギャップ酸化物半導体材料・デバイス」

18:45 〜 19:00奨励賞エントリー英語発表

[18p-A22-19] Impact of in-situ AlO_x passivation on 2-nm-thick InO_x for performance and stability improvement

〇CHIATSONG CHEN¹, Yuki Yoshimoto², Wen-Hsin Chang¹, Toshifumi Irisawa¹, Maeda Tatsurou¹ (1.AIST, 2.KOKUSAI ELECTRIC)

キーワード：

oxide semiconductor、extremely-thin body channel、passivation

Atomic layer deposition based (ALD-based) oxide semiconductor (OS) is a promising channel material for back-end of line (BEOL) transistor owing to the characteristics of low temperature deposition, precise thickness control, and excellent step coverage for 3D structure formation [1]. Indium oxide (InO_x) FET shows great potential for BEOL applications thanks to its superior current characteristics even in extremely thin channel condition [2], although the reliability and stability issue remained an obstacle to achieving commercialization. In this study, we achieved 2-nm-thick InO_x FETs with excellent electrical performance and high stability by using in-situ AlO_x passivation without additional annealing process.