[18p-B1-1~20] 13.9 化合物太陽電池

14:45 〜 15:00奨励賞エントリー英語発表

[18p-B1-7] Intraband Transitions Induced by Below-Bandgap Photoexcitation at CsPbBr₃/GaAs Heterointerface

〇(DC)Hambalee Mahamu¹, Shigeo Asahi¹, Takashi Kita¹ (1.Kobe Univ.)

キーワード：

Perovskite、Solar Cells、Photon Upcoversion

Two-step photon upconversion solar cells (TPU-SCs) are based on a promising solar cell (SC) structure that was designed to harvest sub-bandgap photons, and hence, to reduce the transmission loss. The sub-bandgap photons can be harvested by the intraband transition at the III-V semiconductor heterointerface. The previously reported TPU-SCs are based on III-V semiconductors, for which the intraband transition is well-known. In this work, we studied the CsPbBr₃/GaAs interface which is an interface of perovskite/III-V semiconductor. CsPbBr₃/GaAs-based TPU-SCs were fabricated using a simple structure. We characterized the TPU-SCs using two and single-color excitation conditions and measured photocurrent and photovoltage. Although the conversion efficiency of the CsPbBr₃/GaAs-based TPU-SCs is small, the intraband transition at the CsPbBr₃/GaAs interface may pay the way to further development of TPU-SCs.