[19a-A31-1~11] 17.3 層状物質

10:45 〜 11:00英語発表

[19a-A31-7] CVD synthesis of isolated pentagonal h-BN single crystals

〇Kamal Prasad Sharma^1,2, Takahiro Maruyama^1,2 (1.Meijo Univ., 2.Nanomat. Res. Center)

キーワード：

Chemical vapor deposition、h-BN、crystal growth

Hexagonal boron nitride (h-BN), a structural analogue of graphene, is a wide bandgap 2D insulating layered material, consisting of alternating sp²–bonded boron and nitrogen atoms. h-BN shows appealing properties such as thermally stable in air up to 800^oC, chemical inertness, stable thermal conductivity, and superior elastic properties, and hence has drawn significant attention as a promising material in frontier applications. Although chemical vapor deposition (CVD) technique has developed as the most scalable process to synthesize h-BN on transition metals, the formation of various polygonal-shaped single domain is unclear and are still limited to few microns in their edge length. In this research, we investigated the isolated pentagonal h-BN crystals in single crystallinity prospective.