講演情報
[19p-P05-29]Thermal Diffusion type Indium Doping in ZnO Nanoparticles
〇(D)Abdul Md Halim1, Toshiyuki Yoshida1, Yasuhisa Fujita1 (1.Shimane University)
キーワード：
Thermal Diffusion、Indium doped ZnO NPs
Instead of using traditional semiconductor thin films, particle layer by coating method can increase the options for the base substrates and lower the cost of device fabrication. This allows new materials to be selected as substrates that were not previously possible in conventional semiconductor technology. In our laboratory, we have been working on forming ZnO nanoparticle layers by a spray method and applying them to TFT channels. Although the resulting particle layer exhibits semiconducting properties, it has a problem of extremely high sheet resistance (GΩ/sq or higher). In response to this problem, we have attempted to thermally diffuse Ga, an n-type dopant for ZnO, and have achieved some success in reducing resistance. This time, we have examined the effect of thermal diffusion of Indium (In), which will provide fundamental results for the simultaneous doping of In and Ga into ZnO nanoparticles in the future.
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