[20p-C43-1~11] 13.1 Si系基礎物性・表面界面・シミュレーション

13:30 〜 13:45英語発表

[20p-C43-3] The influence of Ar/N₂ gas flow ratio on the electrical characteristics of ferroelectric hafnium nitride formed by ECR-plasma sputtering

〇KANGBAI LI¹, Shun-ichiro Ohmi¹ (1.Tokyo Tech.)

キーワード：

hafnium nitride、ferroelectric、gas flow ratio

The ferroelectric HfO₂ thin film has captured considerable interest due to its compatibility with Si and scalability. However, the formation of a SiO₂ interfacial layer leading to depolarization fields and degradation in device characteristics. We have reported that the ferroelectric HfN_1.15 thin film formation on Si substrates without interfacial layer formation. One of the issues of ferroelectric HfN_1.15 thin film is the small memory window (MW).
In this research, we investigated the influence of Ar/N₂ gas flow ratio on the electrical characteristics of HfN_x thin film to improve the ferroelectric properties.