講演情報
[10a-E301-10]Origin of Thermally Activated Negative Threshold Voltage Overshoot in HfOx/AlOx Gated InOx FETs
〇ZIHHAO DAI1, Kazuki Ishiyama2,3, Xuanhedong Gao1, Chia-Tsong Chen2, Toshifumi Irisawa2, Tatsuro Maeda2, Mitsuru Takenaka1, Kasidit Toprasertpong1 (1.The Univ. of Tokyo, 2.AIST, 3.Nihon Univ.)
キーワード：
Oxide Semiconductor、Ultrathin body channel、Bias stability
Oxide semiconductors, particularly InOx, are promising candidates for monolithic 3D integration due to their high mobility and back-end-of-line (BEOL) compatibility. However, negative bias temperature instability (NBTI) in oxide semiconductor transistors remains a critical reliability challenge, and the underlying mechanisms are quite complex. In this work, we investigate the NBTI behavior and subsequent recovery kinetics of back-gated InOx FETs with HfOx/AlOx dielectric layer to understand the instability mechanism.