講演情報
[10a-F212-3]High-Temperature S-Parameter Characterization of H-Terminated Diamond MOSFETs
〇須崎 秀史1、フロランタン マチュー1、小泉 治彦1、梅沢 仁1 (1.大熊ダイヤモンドデバイス)
キーワード：
Diamond MOSFET、S-parameter characterization、High-temperature operation
High-temperature S-parameter characterization of hydrogen-terminated diamond MOSFETs up to 300°C is reported. To enable RF measurements beyond the temperature limit of conventional RF probes, a 300°C-compatible evaluation system was developed using FormFactor Z-probes and active N2 cooling. Stable RF operation was confirmed up to 100°C for a H-terminated diamond MOSFET (Wg = 150 μm × 6) under VDS = −8 V and VGS = −1 V. Although the drain current decreased with temperature, RF performance improved, with fmax increasing from 5.38 to 6.02 GHz and MAG increasing from 7.08 to 7.29 dB. On-wafer SOLT calibration was performed at each temperature. The temperature dependence of extracted small-signal equivalent-circuit parameters, including gm, CGS, CGD, and parasitic elements, will also be presented and discussed.