講演情報
[10a-PB4-10]Lasing Characteristics of 1.5-μm-Band GaInAsP MQW High-Mesa Laser Diodes on Directly Bonded InP/Si Substrate
〇(M1)Zhiyang Sheng1, Shuo Yao1, Shiyao Wei1, Qiguang Jia1, Rong Le1, Mizuki Holt1, Koki Tominaga1, Ruiqi Zhang1, Kazuhiko Shimomura1 (1.Sophia University)
キーワード：
MOVPE、Laser Diode、Silicon photonics