講演情報
[10a-S1-4]Low-Field Carrier Transport in Amorphous and Polycrystalline InGaOx FETs Investigated by Gated Hall Measurement
〇(D)Anlan Chen1, Xingyu Huang1, Kota Sakai1, Takuya Saraya1, Toshiro Hiramoto1, Mutsunori Uenuma2, Takanori Takahashi3, Yukiharu Uraoka3, Masaharu Kobayashi1 (1.IIS, Univ. of Tokyo, 2.AIST, 3.NAIST)
キーワード：
semiconductor、Oxide semiconductor
Oxide semiconductor (OS) FETs are promising for monolithic 3D integration and 3D memory because of their low-temperature process, high mobility, and low leakage current. Recently, polycrystalline OS FETs have attracted attention for higher performance than amorphous OS FETs. However, carrier concentration and mobility are usually coupled in conventional FET analysis. In this work, we investigate low-field carrier transport in amorphous and polycrystalline InGaOx (a-IGO and poly-IGO) FETs by gated Hall measurement from 30 K to 300 K, so that carrier concentration and mobility are separately measured.