講演情報
[10p-E206-7]Factors Affecting the Passivation Performance of Non-Stoichiometric Cat-CVD SiNx Films
〇Yuehong Shan1, Kensaku Maeda1, Keisuke Ohdaira1 (1.JAIST)
キーワード：
Cat-CVD、silicon nitride passivation
Silicon nitride (SiNx) films are widely used as passivation layers in crystalline silicon solar cells. This study investigates the effects of deposition pressure, gas composition, film thickness, and substrate type on the passivation performance of non-stoichiometric Cat-CVD SiNx films. The films were deposited on crystalline silicon wafers by Cat-CVD, and their composition was controlled by varying the SiH4/NH3 gas flow ratio and deposition pressure. After deposition, the samples were annealed at 350 degrees Celsius for 30 min in nitrogen. Carrier lifetime measurements were performed to evaluate passivation quality. The results showed that deposition pressure strongly influenced passivation performance. Carrier lifetime remained around 300-500 microseconds at pressures of 3.5-10 Pa but increased markedly at 18 Pa. Si-rich and N-rich films exhibited carrier lifetimes above 1500 microseconds after annealing, demonstrating excellent passivation performance.