講演情報
[10p-E215-1][Invited Talk] Enhanced Low-Temperature Crystallization of Hf0.5Zr0.5O2 Thin Films through H2O2 Oxidation and Exposure Control in ALD
〇Haoming Che1, Takashi Onaya1,2, Atsushi Tamura1, Masaki Ishii3, Hiroshi Taka3, Koji Kita1 (1.Dept. of Adv. Mater. Sci., The Univ. of Tokyo, 2.NIMS, 3.Nippon Sanso)
キーワード：
Atomic layer deposition、Hf0.5Zr0.5O2、H2O2
This study investigates how ALD oxidant exposure affects impurity reduction and low-temperature crystallization behavior in Hf0.5Zr0.5O2 (HZO) thin films. HZO films were deposited using H2O or H2O2 as the oxidant, and the oxidant exposure was controlled by changing the number of oxidant pulses per ALD cycle. Impurity analysis showed that increasing oxidant exposure reduced residual ligand-derived impurities, and H2O2-based films showed lower impurity levels than H2O-based films. XRD analysis revealed that the O/T/C-related crystallinity of as-grown films increased with oxidant exposure and then approached saturation. The same trend was retained after 400 °C post-deposition annealing, indicating that low-temperature crystallization is strongly affected by the as-grown film state formed during ALD. H2O2-based HZO films consistently showed higher crystallinity than H2O-based films at comparable oxidant pulse numbers. These results suggest that the distinct oxidation chemistry of H2O2 is effective for reducing residual impurities and promoting low-temperature crystallization of HZO thin films.