講演情報
[10p-E301-16]Layer transfer of (010) β-Ga2O3 onto SiO2/Si substrates via hydrogen implantation for heterogeneous integration
〇Yun Jia1, Jewook Jeon1, Kedai Toyoshima1, Ziyi Chen1, Riena Jinno1, Satoshi Iwamoto1,2 (1.RCAST Univ.Tokyo, 2.IIS Univ.Tokyo)
キーワード：
Ultra Wide bandgap semiconductor、Heterogeneous integration、Ion implantation
β-Ga2O3, an ultrawide-bandgap semiconductor, has attracted significant interest for power electronic, photonic, and quantum applications. For improved thermal management and photonic integration, heterogeneous integration and β-Ga2O3-on-insulator structures are highly desirable. Although ion-implantation-based layer transfer of (-201) β-Ga2O3 has been reported, heterogeneous integration of (010) β-Ga2O3 has not yet been demonstrated.
In this work, hydrogen implantation was applied to (010) β-Ga2O3 for layer transfer applications. After implanting at 80 keV with an expected dose of 5 × 1016 cm-2 and annealing at 500 °C, surface blistering and exfoliation were observed, preferentially along the [001] direction. Partial transfer of β-Ga2O3 films onto SiO2/Si substrates was successfully achieved.
In this work, hydrogen implantation was applied to (010) β-Ga2O3 for layer transfer applications. After implanting at 80 keV with an expected dose of 5 × 1016 cm-2 and annealing at 500 °C, surface blistering and exfoliation were observed, preferentially along the [001] direction. Partial transfer of β-Ga2O3 films onto SiO2/Si substrates was successfully achieved.