講演情報
[10p-PA2-3]Relationship between the electronic states, the electrical states and the atomic structure of HfO2/β-Ga2O3 interface
〇(DC)Abul Tooshil1,2, Takahiro Nagata1, Masaharu Watanabe1,3, Yoshiyuki Yamashita1,2, Masaaki Kobata4, Tatsuo Fukuda4 (1.NIMS, 2.Kyushu Univ, 3.Meiji Univ, 4.JAEA)
キーワード：
Ga2O3、HfO2、Interface、HAXPES、GIXRD
beta-Ga2O3 is a promising ultra-wide band gap semiconductor for power devices; however, the electrical performance of beta-Ga2O3-based MOS structures is strongly affected by interface electronic states. In this study, HfO2 thin films were deposited on beta-Ga2O3 (010) substrates by atomic layer deposition. The atomic structure, electronic states, and electrical properties of the HfO2/beta-Ga2O3 interface were investigated using GIXRD, HAXPES, C-V, and I-V measurements. GIXRD results show that the as-deposited and 400 degC annealed HfO2 films exhibit no sharp diffraction peaks, while the 700 degC annealed film shows clear peaks assigned to monoclinic HfO2. These results indicate annealing-induced structural evolution of HfO2, which may influence the electronic and electrical properties of the HfO2/beta-Ga2O3 interface.