講演情報
[11a-E308-5]Honeycomb-like carbon layer commensurate with
(√(3)×√(3))R30^°-Si2N3/SiC(0001)
〇(D)Sukran Kutlu1, Anton Visikovskiy1, Jo Onoda2, Satoru Tanaka1,3 (1.Kyushu Univ., 2.Univ. Teacher Edu. Fukuoka, 3.Taiwan Tech.)
キーワード：
N2 pretreatment、epitaxial carbon layer、Si2N3/SiC interface
In this study, an epitaxial carbon surface layer commensurate with the (√(3) × √(3))R30^° (R3)-ordered Si2N3/SiC interface was formed by chemical vapor deposition (CVD) following N2 annealing. Unlike the conventional (6√(3) × 6√(3))R30^° buffer layer, this approach preserves the nanoscale SiC surface morphology while enabling a distinct R3 periodicity, as confirmed by low-energy electron diffraction (LEED). X-ray photoelectron spectroscopy (XPS) indicates enhanced sp3-like C--Si bonding at the interface, while Raman spectroscopy supports the formation of the carbon layer. A structural model suggests the presence of a honeycomb-like carbon network commensurate with the Si2N3 interlayer. These findings demonstrate that N2 annealing prior to CVD enables the stabilization of a structurally distinct carbon layer, providing a new route for engineering carbon/SiC interfaces and graphene nanostructures.